Temperature-indicating field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature

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257468, 257470, 257723, H01L 3106

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active

059491213

ABSTRACT:
A temperature-indicating field effect transistor (100) includes a transistor die (101) including a drain (103), a source (105), and a gate (107). A temperature measurement device (109, 111) is thermally coupled to the transistor die (101) and electrically coupled to the gate (107). A transistor package (113) encapsulates the transistor die (101) and the temperature measurement device (109, 111). The transistor package (113) has three externally accessible terminals including a first terminal (115) connected to the drain (103), a second terminal (117) connected to the source (105), and an input terminal (119) coupled to the temperature measurement device (109, 111).

REFERENCES:
patent: 4896199 (1990-01-01), Tsuzuki et al.
patent: 5025298 (1991-06-01), Fay et al.

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