Temperature independent semiconductor resistor and method of mak

Details Temperature independent semiconductor resistor and method of mak Temperature independent semiconductor resistor and method of mak

1976-02-17

1977-12-13

Padgett, Benjamin R.

Electrical resistors

Resistance value temperature-compensated

338308, 427 86, 427 87, 357 64, 357 59, 75134S, 75134G, H01C 702

Patent

active

040632105

ABSTRACT:
A polycrystalline film having an electrical resistivity independent of temperature is disclosed. The film has substantially only one crystalline phase. The crystals forming that phase are of a semiconductive material supersaturated with a deep level dopant and have average dimensions from about 200 to 10,000 angstroms. At least about 10 atomic percent of the deep level dopant is dispersed within the semiconductive material crystals forming the one crystalline phase. The film is useful in making an electrical resistor whose resistance value is independent of temperature from about 4.degree. Kelvin to approximately 373.degree. Kelvin. Aging effects limit utility at significantly higher temperatures.

REFERENCES:
patent: 2871427 (1959-01-01), Tyler et al.
patent: 3240625 (1966-03-01), Collins
patent: 3248677 (1966-04-01), Hunter et al.
patent: 3448350 (1969-06-01), Yamashita et al.
patent: 3725161 (1973-04-01), Kuper
Journal of Applied Physics, 33, No. 12 (Dec. 1962), 3458-3463.

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