Temperature-independent gain control circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307501, 307304, 330277, 330279, H03K 3353

Patent

active

045786038

ABSTRACT:
A temperature-independent gain control circuit includes a dual-gate MOSFET having the input signal applied to one gate and a resistance connected to the source. Control means are provided which are responsive to a control voltage to control the voltage between the other gate of the MOSFET and the end of the resistance remote from the source in such a manner as to maintain the drain current of the MOSFET proportional to the control voltage.

REFERENCES:
patent: 3443240 (1969-05-01), Santilli
patent: 3480873 (1969-11-01), Carter
patent: 4077014 (1978-02-01), Satoh
patent: 4275361 (1981-06-01), Schurmann
patent: 4465980 (1984-08-01), Huang et al.

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