Temperature gradient zone melting utilizing infrared radiation

Details Temperature gradient zone melting utilizing infrared radiation Temperature gradient zone melting utilizing infrared radiation

1975-05-19

1977-01-04

Ozaki, G.

Metal treatment

Compositions

Heat treating

219354, 252 623GA, 252 623E, 148171, 148172, 148177, 148179, 148187, 148188, H01L 21225

Patent

active

040010473

ABSTRACT:
Disclosed is a method for selectively doping semiconductor materials utilizing temperature gradient zone melting. The required temperature gradient is provided by infrared radiation impinging on and heating one surface of a body of semiconductor material to be doped. The heat is conducted through the body creating a temperature gradient.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3627590 (1971-12-01), Mammel
patent: 3897277 (1975-07-01), Blumenfeld
patent: 3898106 (1975-08-01), Cline et al.
patent: 3901736 (1975-08-01), Anthony et al.
patent: 3904442 (1975-09-01), Anthony et al.

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