Temperature gradient zone melting through an oxide layer

Metal treatment – Compositions – Heat treating

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148188, H01L 21225

Patent

active

040765598

ABSTRACT:
Disclosed is a method of manufacturing semiconductor devices by thermomigrating impurities through an oxide layer.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3897277 (1975-07-01), Blumenfeld
patent: 3899362 (1975-08-01), Cline et al.
patent: 3901736 (1975-08-01), Anthony et al.
patent: 3998662 (1976-12-01), Anthony et al.
patent: 4042448 (1977-08-01), Chang

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