Temperature gradient zone melting process employing a buffer lay

Details Temperature gradient zone melting process employing a buffer lay Temperature gradient zone melting process employing a buffer lay

1982-04-09

1983-08-16

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148172, 148177, 148179, 148187, 148188, H01L 21228

Patent

active

043989748

ABSTRACT:
A process is provided for fabricating a semiconductor device by thermal gradient zone melting, whereby metal-rich droplets such as aluminum migrate through a semiconductor wafer such as silicon to create conductive paths. One surface of the wafer in provided with a buffer layer thereon, which is placed directly on a heating surface. The buffer layer terminates the migration of the droplets to prevent alloying of the droplets with the heating surface.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3895967 (1975-07-01), Anthony et al.
patent: 3897277 (1975-07-01), Blumenfeld
patent: 3910801 (1975-10-01), Cline et al.
patent: 3977910 (1976-08-01), Anthony et al.
patent: 3979230 (1976-09-01), Anthony et al.
patent: 3988661 (1976-12-01), Chang et al.
patent: 3988662 (1976-12-01), Anthony et al.
patent: 4001047 (1977-01-01), Boah
patent: 4033786 (1977-07-01), Anthony et al.
patent: 4035199 (1977-07-01), Anthony et al.

Affiliated with

Also associated with

Rating

Temperature gradient zone melting process employing a buffer lay does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Temperature gradient zone melting process employing a buffer lay, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature gradient zone melting process employing a buffer lay will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-813042