Temperature detector

Electrical resistors – Resistance value responsive to a condition – Ambient temperature

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338 22SD, 338306, 338314, H01C 304

Patent

active

047542543

ABSTRACT:
A temperature detector having a semiconductor layer which is a p-type or n-type semiconductor doped by addition of an impurity. The semi- semiconductor is completely amorphous, or substantially amorphous with the inclusion of microcrystals. The temperature detector has good sensitivity at a temperature of not more than 100 K, and has good linearity of the change of resistivity to the change of temperature over a wide range of temperature.

REFERENCES:
patent: 4047436 (1977-09-01), Bernard et al.
patent: 4414274 (1983-11-01), Hieber
S. Tanaka, "Low Temperature", Experimental Physics Lecture No. 15, pp. 175-179 and 184, Jul. 1974.

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