Temperature controlled process for the epitaxial growth of a fil

Details Temperature controlled process for the epitaxial growth of a fil Temperature controlled process for the epitaxial growth of a fil

1993-04-19

1994-05-03

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437108, 437946, H01L 2100, H01L 2102, H01L 2120, H01L 2136

Patent

active

053087887

ABSTRACT:
A ramp activated low temperature quality epitaxial growth process. A substrate is pre-conditioned and a passivation layer overlying the substrate surface is formed. The substrate is introduced into a process chamber having a controlled temperature. A process chamber purge technique is used to remove oxygen and contaminants from the process chamber before epitaxial growth begins. A process gas, which has an epitaxial growth species, a process chamber purging species and other possible species, is introduced into the process chamber at a low temperature. The process gas and the passivation layer keep the process chamber environment and the substrate surface free from contamination and free from native oxide growth before and, in some cases, during epitaxial growth. The process chamber temperature is gradually elevated to initiate a quality epitaxial growth by starting growth relative to decomposition of the passivation layer.

REFERENCES:
patent: 3945864 (1976-03-01), Goldsmith et al.
patent: 4686758 (1987-08-01), Liu et al.
"Limited reaction processing: Silicon epitaxy," by J. F. Gibbons et al., Applied Physics Letters, Oct. 1985, vol. 47, No. 7, pp. 721-723.
"Low Temperature Surface Cleaning of Si and Its Application to Silicon MBE," by A. Ishizaka et al., Journal of the Electrochemical Society, Apr. 1986, vol. 133, No. 4, pp. 666-671.

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