Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1996-01-16
1998-05-05
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117202, 117217, 117222, C30B 3500
Patent
active
057468281
ABSTRACT:
A crystal-pulling apparatus incorporates a temperature sensor and an adjustable radiation shield. The temperature sensor measures temperatures of a melt surface adjacent to a solidification interface between a crystal and the melt. The radiation shield regulates radiational cooling of the melt. A control system adjusts the radiation shield in response to changes in the measured temperature of the melt for enhancing dislocation-free growth of the crystal.
REFERENCES:
patent: 3692499 (1972-09-01), Andrychuk
patent: 4032389 (1977-06-01), Joyce
patent: 4330361 (1982-05-01), Kuhn-Kuhnenfeld et al.
patent: 4794263 (1988-12-01), Katsuoka et al.
patent: 4926357 (1990-05-01), Katsuoka et al.
patent: 5132091 (1992-07-01), Azad
patent: 5137699 (1992-08-01), Azad
patent: 5162072 (1992-11-01), Azad
patent: 5176787 (1993-01-01), Kawashima et al.
patent: 5178720 (1993-01-01), Frederick
patent: 5361721 (1994-11-01), Takano et al.
patent: 5408952 (1995-04-01), Wakabayashi et al.
patent: 5437242 (1995-08-01), Hofstetler et al.
"Czochralski-Grown Silicon" by Werner Zulehner and Diethart Huber, Crystals 8, Springer-Verlag Berlin Heidelberg, Germany, 1982, pp. 91-102.
"Temperature Oscillations in Silicon Melts", technical paper from Luxtron, Santa Clara, CA, Jan. 1989, 22 pages.
"Thermal Analysis of the Double-Crucible Method in Continuous Silicon Czocharal ski Processing" by N. Ono, M. Kida, Y. Arai and K. Sahira, J. Electrochem. Soc., vol. 140, No. 7, Jul. 1993, pp. 2101-2105.
"The Incorporation of Oxygen into Silicon Crystals" by Wen Lin, Semi-conductors and semimetals, vol. 42, by Academic Press, Inc., 1994, pp. 9-52.
"Precision Multi-Channel Temperature Mesurement and Control" Model 100 brochure from Accufiber Inc., Beaverton, Oregon, 1988, 6 pages.
A drawing of what is believed to be a prior crystal growing machine having a radiation shield movable axially of a crucible.
An article entitled "Sumitomo Zone-leveling CZ Techniques" with an accompanying drawing, Japanese Silicon Crystal Manufacturing Technology Newsletter, Jun. 1993, p. 3.
Garrett Felisa
General Signal Corporation
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