Temperature control method of epitaxial growth apparatus

Details Temperature control method of epitaxial growth apparatus Temperature control method of epitaxial growth apparatus

2006-09-21

2010-11-16

Komakov, Michael (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S094000, C117S106000, C118S715000, C118S719000, C118S724000, C374S001000

Reexamination Certificate

active

07833348

ABSTRACT:
An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to thereby improve the quality of an epitaxial substrate.After calibrating an upper pyrometer by a thermocouple mounted to a temperature calibrating susceptor, a measured value of a lower pyrometer is adjusted to a calibrated value of the upper pyrometer. Then, a correlation line between substrate temperature indirectly measured by the upper pyrometer at the time of epitaxial growth onto a sample substrate and haze of a sample substrate measured immediately after epitaxial growth is set to indirectly measure a substrate temperature by the upper pyrometer at the time of epitaxial growth onto a mass-production substrate. Moreover, substrate temperature at the time of epitaxial growth onto the mass-production substrate is estimated by applying the haze of the mass-production substrate measured immediately after epitaxial growth to the correlation line and then a measured temperature of the upper pyrometer is adjusted to the estimated temperature.

REFERENCES:
patent: 3172792 (1965-03-01), Handelman
patent: 3178313 (1965-04-01), Moest
patent: 3235418 (1966-02-01), Sirtl et al.
patent: 3316121 (1967-04-01), Lombos et al.
patent: 3567895 (1971-03-01), Paz
patent: 3666553 (1972-05-01), Arthur et al.
patent: 3751310 (1973-08-01), Cho
patent: 3830654 (1974-08-01), Cho
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 5213985 (1993-05-01), Sandroff et al.
patent: 5568978 (1996-10-01), Johnson et al.
patent: 5710407 (1998-01-01), Moore et al.
patent: 6596973 (2003-07-01), Donald et al.
patent: 6638876 (2003-10-01), Levy et al.
patent: 6703592 (2004-03-01), Van Bilsen
patent: 6924463 (2005-08-01), Donald et al.
patent: 2007/0062439 (2007-03-01), Wada et al.
patent: 2007/0291816 (2007-12-01), Volf et al.
patent: 11-51769 (1999-02-01), None
patent: 2000-269137 (2000-09-01), None
English language translation of patent abstract 2000-269137.

Affiliated with

Also associated with

Rating

Temperature control method of epitaxial growth apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Temperature control method of epitaxial growth apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature control method of epitaxial growth apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4209739