Temperature control in vacuum

Details Temperature control in vacuum Temperature control in vacuum

1987-06-30

1988-02-09

Albritton, C. L.

Electric heating

Metal heating

By arc

219121EB, 2504922, B23K 1500

Patent

active

047243007

ABSTRACT:
An apparatus 10 and a method are provided for treating silicon wafers 26 in vacuum with an ion beam B and for controlling the temperature of the wafers 26. The wafers 26 are mounted on a drum 22 which is rotated through the ion beam B, and which is large enough that the mean equilibrium temperature of the wafers 26, in the absence of any other energy sources, would be less than the desired temperature. The wafers 26 are additionally heated by infra-red lamps 34 so the desired temperature is achieved.

REFERENCES:
patent: 3566960 (1971-03-01), Stuart
patent: 3818982 (1974-06-01), Wagner
patent: 4043836 (1977-08-01), Jun
patent: 4155011 (1979-05-01), Mark
patent: 4261762 (1981-04-01), King
patent: 4453080 (1984-06-01), Berkowitz
patent: 4569697 (1986-02-01), Tsu et al.

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