Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2003-04-08
2008-09-23
Kackar, Ram N. (Department: 1792)
Coating apparatus
Gas or vapor deposition
With treating means
C118S724000, C118S728000, C219S444100, C219S544000, C219S638000, C219S648000, C219S656000, C219S702000, C156S345520, C156S345530
Reexamination Certificate
active
07427329
ABSTRACT:
A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.
REFERENCES:
patent: 3836751 (1974-09-01), Anderson
patent: 3947236 (1976-03-01), Lasch, Jr.
patent: 4738748 (1988-04-01), Kisa
patent: 4860687 (1989-08-01), Frijlink
patent: 4975561 (1990-12-01), Robinson et al.
patent: 5294778 (1994-03-01), Carman et al.
patent: 5332442 (1994-07-01), Kubodera et al.
patent: 5430271 (1995-07-01), Orgami et al.
patent: 5650082 (1997-07-01), Anderson
patent: 5790750 (1998-08-01), Anderson
patent: 5891251 (1999-04-01), MacLeish
patent: 5997588 (1999-12-01), Goodwin et al.
patent: 6001175 (1999-12-01), Maruyama et al.
patent: 6064799 (2000-05-01), Anderson et al.
patent: 6072162 (2000-06-01), Ito et al.
patent: 6080969 (2000-06-01), Goto et al.
patent: 6099056 (2000-08-01), Siniaguine et al.
patent: 6111225 (2000-08-01), Ohkase et al.
patent: 6179924 (2001-01-01), Zhao et al.
patent: 6183565 (2001-02-01), Granneman et al.
patent: 6207936 (2001-03-01), De Waard et al.
patent: 6222990 (2001-04-01), Guardado et al.
patent: 6329304 (2001-12-01), Kuznetsov et al.
patent: 6492621 (2002-12-01), Ratliff et al.
patent: 6644965 (2003-11-01), Ookura et al.
patent: 6901317 (2005-05-01), Starner
patent: 63-136532 (1988-08-01), None
patent: 08236533 (1996-09-01), None
patent: 10321505 (1998-12-01), None
patent: 11008204 (1999-01-01), None
patent: WO 00/42638 (2000-07-01), None
patent: WO/00/68977 (2000-07-01), None
patent: WO 00/68977 (2000-11-01), None
patent: WO 01/69656 (2001-09-01), None
Porter et al., “Fast-ramp rapid vertical processor for 300-mm Si wafer processing,”Part of the SPIE Conference on Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, Santa Clara, CA, Sep. 1998, SPIE vol. 3507.
Granneman Ernst H. A.
Kuznetsov Vladimir
ASM International N.V.
Kackar Ram N.
Knobbe Martens Olson & Bear LLP
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