Temperature compensation of select gates in non-volatile memory

Details Temperature compensation of select gates in non-volatile memory Temperature compensation of select gates in non-volatile memory

2007-12-18

2008-12-09

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185180, C365S185230

Reexamination Certificate

active

07463528

ABSTRACT:
Reading and verify operations are performed on non-volatile storage elements using temperature-compensated read voltages for unselected word lines, and/or for select gates such as drain or source side select gates of a NAND string. In one approach, while a read or verify voltage is applied to a selected word line, temperature-compensated read voltages are applied to unselected word lines and select gates. Word lines which directly neighbor the selected word line can receive a voltage which is not temperature compensated, or which is temperature-compensated to a reduced degree. The read or verify voltage applied to the selected word line can also be temperature-compensated. The temperature compensation may also account for word line position.

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