Temperature compensation of LDMOS devices

Details Temperature compensation of LDMOS devices Temperature compensation of LDMOS devices

1998-04-13

2000-07-18

Kim, Jung Ho

Miscellaneous active electrical nonlinear devices, circuits, and

External effect

Temperature

327543, H01L 3500

Patent

active

060912790

ABSTRACT:
Temperature compensation of LDMOS devices as are employed in high power amplifiers follows from replacing the voltage source and resistive divider that feed the sensing diode of prior art temperature compensators for transistor amplifiers, with a current source feeding the sensing diode in a manner that is substantially independent of voltage variations which follow from temperature change. Such current variations as result from temperature change, in the circuit of the invention, produce variations in the bias voltage at the gate of the LDMOS power transistor which are many times less than the temperature coefficient of the LDMOS device, in producing virtually error-free temperature compensation.

REFERENCES:
patent: 5038053 (1991-08-01), Djenguerian et al.
patent: 5081380 (1992-01-01), Chen
patent: 5136182 (1992-08-01), Fawal
patent: 5434533 (1995-07-01), Furutani
patent: 5631600 (1997-05-01), Akioka et al.
patent: 5744999 (1998-04-01), Kim et al.

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