Temperature compensation for diffused semiconductor strain devic

Details Temperature compensation for diffused semiconductor strain devic Temperature compensation for diffused semiconductor strain devic

1982-08-30

1984-04-24

Woodiel, Donald O.

Measuring and testing

Fluid pressure gauge

With pressure and/or temperature compensation

73721, 338 7, 357 26, G01L 1904

Patent

active

044440545

ABSTRACT:
A system for extending the temperature range over which diffused semiconductor strain sensing devices specifically can be used includes a semiconductor chip having a base material and a semiconductor device formed in the base material. Biasing potential is applied to the base material and excitation potential applied to the diffused device. The biasing potential and the excitation potential are selected relative to one another to permit a predetermined variation in the semiconductor device characteristic with temperature over an extended temperature range. In the semiconductor strain sensing application, this predetermined characteristic is the impedance of the device. In this way, compensation for the variation of the characteristic can be applied to extend the useful temperature range for the semiconductor device. In particular, the design considerations to achieve the relative biasing uniquely provide the relative potentials in a simple manner, providing for low cost devices with the desired extended temperature range.

REFERENCES:
patent: 3537319 (1970-11-01), Yerman
patent: 3800264 (1974-03-01), Kurtz et al.
patent: 3836796 (1974-09-01), Solomon et al.
patent: 4125820 (1978-11-01), Marshall
patent: 4164668 (1979-08-01), Delaporte et al.
patent: 4191057 (1980-03-01), Busta
patent: 4205556 (1980-06-01), Runyan
patent: 4300395 (1981-11-01), Shirouzu et al.

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