Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1986-11-20
1988-06-07
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307310, 307591, 330289, 358166, G01K 724, H03K 1714
Patent
active
047498897
ABSTRACT:
A so-called "V.sub.BE multiplier" circuit is used to temperature compensate a semiconductor device with respect to both short term self-heating effects and long term ambient temperature effects. The compensation circuit includes a transistor with a base, an emitter coupled to an operating potential, and a collector coupled to an operating potential. First and second resistors are respectively coupled across the base-emitter and collector-base junctions of the transistor. The values of the resistors as chosen so that a voltage derived from the collector-emitter path of the transistor and applied to the semiconductor device exhibits a temperature coefficient which substantially matches the temperature coefficient of the semiconductor device.
REFERENCES:
patent: 3555309 (1971-01-01), Limberg
patent: 3557383 (1971-01-01), Wavre et al.
patent: 3973147 (1976-08-01), Yu
patent: 4207538 (1980-06-01), Goel
patent: 4260956 (1981-04-01), Harford
patent: 4494145 (1985-01-01), Kokufukata et al.
patent: 4652144 (1987-03-01), Gunther et al.
Figure 255, pp. 178-180 of Power Transistor Applications Manual, Solid State Division, RCA Corporation.
Bell Isaac M.
Lagoni William A.
Parker Robert P.
Duong Tai V.
Emanuel Peter M.
Kurdyla Ronald H.
Miller Stanley D.
Rasmussen Paul J.
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