Temperature compensating transistor bias device

Details Temperature compensating transistor bias device Temperature compensating transistor bias device

1974-10-02

1980-12-30

Larkins, William D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307297, 330289, 357 28, 357 81, 357 86, H03F 304

Patent

active

042425980

ABSTRACT:
The base-to-emitter bias voltage and current of a high frequency transistor, operating class AB or class A, is derived from a semiconductive bias device consisting of a semiconductive diode junction fed with current from a constant current source to derive a V.sub.BE voltage thereacross which is the bias source voltage. This source voltage is applied across the base-to-emitter junction of the RF transistor via the intermediary of a positive temperature coefficient silicon resistor. The diode and silicon resistor are packaged together for mounting on a heat sink common to the transistor, whereby the transistor is compensated for temperature dependent changes in V.sub.BE and h.sub.FE.

REFERENCES:
patent: 3286138 (1966-11-01), Shockley
patent: 3289105 (1966-11-01), Funfstuck
patent: 3358152 (1967-12-01), Alexakis
patent: 3585511 (1971-06-01), Schatter et al.
patent: 3649872 (1972-03-01), Garboushian
GE Transistor Manual, 7th Edition (1964), pp. 106-107.

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