Temperature compensating semiconductor lasers

Coherent light generators – Particular beam control device – Optical output stabilization

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372 44, 372 92, H01S 313

Patent

active

045832277

DESCRIPTION:

BRIEF SUMMARY
BACKGROUND OF THE INVENTION

This invention relates to temperature effect compensation in semiconductor lasers provided with external cavities. The operation of semiconductor lasers with external cavities has been described by T. Kanada and K. Nawata in `Optical Communictions`, Vol.31 No. 1 pp 81-4 (October 1979) and by D. Renner and J. E. Carrol in `Electronics Letters` Vol.15 No.3 pp 73-4 (February 1979).


SUMMARY OF THE INVENTION

According to a first aspect of the present invention there is provided a semiconductor laser in which at least a part of the laser optical feedback is provided by an external reflector spaced from the semiconductive material of the laser so as to form a composite optical cavity consisting of a semiconductive part provided by the semiconductive material and an external part of shorter optical path length provided by the space between the semiconductive material and the external reflecting surface, which external reflector is supported on a mount constructed such that in response to changes in temperature it moves the external reflector relative to the adjacent surface of the semiconductive material so as to provide the external part of the cavity with thermal expansion coefficient substantially matched with the mode wavelength expansion coefficient of the internal part of the cavity.
According to a second aspect of the present invention there is provided a semiconductor laser in which at least a part of the laser optical feedback is provided by an external reflector spaced from the semiconductive material of the laser so as to form a composite optical cavity consisting of a semiconductive part provided by the semiconductive material and an external part of shorter optical path length provided by the space between the semiconductive material and the external reflecting surface, which external reflector is supported on a mount constructed such that in response to changes in temperature it moves the external reflector relative to the adjacent surface of the semiconductive material so as to provide the external part of the cavity with thermal expansion coefficient substantially matched with the peak gain wavelength expansion coefficient.
According to a third aspect of the present invention there is provided a semiconductor laser in which the laser optical feedback is provided by an external reflector spaced from the semiconductive material of the laser so as to form a composite optical cavity consisting of a semiconductive part provided by the semiconductive material and an external part provided by the space between the semiconductive material and the external reflecting surface, which external reflector is supported on a mount constructed such that in response to changes in temperature it moves the external reflector relative to the anti-reflection coated adjacent surface of the semiconductive material so as to provide the external part of the cavity with thermal expansion coefficient providing the composite cavity with a mode wavelength expansion coefficient substantially equal to zero.
According to a fourth aspect of the present invention there is provided a semiconductor laser in which the laser optical feedback is provided by an external reflector spaced from the semiconductive material of the laser so as to form a composite optical cavity consisting of a semiconductive part provided by the semiconductive material and an external part provided by the space between the semiconductive material and the external reflecting surface, which external reflector is supported on a mount constructed such that in response to changes in temperature it moves the external reflector relative to the anti-reflection coated adjacent surface of the semiconductive material so as to provide the external part of the cavity with thermal expansion coefficient providing the composite cavity with a mode wavelength expansion coefficient substantially equal to the peak gain wavelength expansion coefficient.


BRIEF DESCRIPTION OF THE DRAWINGS

There follows a description of the background to the inventio

REFERENCES:
patent: 4143940 (1979-03-01), Khoe
patent: 4156206 (1979-05-01), Comerford et al.
patent: 4293826 (1981-10-01), Scifres et al.

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