Temperature-compensated Zener diode

Details Temperature-compensated Zener diode Temperature-compensated Zener diode

1982-06-24

1985-11-19

James, Andrew J.

357 64, 357 28, 357 76, 357 37, 357 38, 357 33, H01L 2990

Patent

active

045545685

ABSTRACT:
An irradiation-stable, temperature-compensated Zener diode and a process for producing the Zener diode. The diode includes a first pn junction having metallic impurities diffused into the corresponding type n region, a second pn junction with a type n region differing from that of the first pn junction, the two junctions being interconnected so that the first junction is forward-biased while the second junction is reversed-biased. Two metal layers acting as electrical contacts are deposited on each p region and there are two insulating layers.

REFERENCES:
patent: 2936425 (1960-05-01), Shockley
patent: 3416046 (1968-12-01), Dickson, Jr. et al.
patent: 3440113 (1969-04-01), Wolley
patent: 3723832 (1973-03-01), Bachmeier
patent: 3953254 (1976-04-01), Valdman
patent: 3992715 (1976-11-01), Delagebeaudeuf et al.
patent: 4079402 (1978-03-01), Dunkley et al.
patent: 4200877 (1980-04-01), Suzuki et al.
patent: 4349394 (1982-09-01), Wei

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