Patent
1977-12-13
1980-04-29
Clawson, Jr., Joseph E.
357 28, 357 59, 357 89, H01L 2990
Patent
active
042008778
ABSTRACT:
Disclosed is a temperature-compensated voltage reference diode comprising a breakdown PN junction for establishing the zener breakdown voltage, a PN junction for temperature compensation having a temperature coefficient opposite to that of the breakdown PN junction, the breakdown PN junction and the temperature-compensating PN junction being integrally formed in a semiconductor substrate in a laminated fashion with these PN junctions connected in inverse series with each other, and a semiconductor region interposed between the breakdown PN junction and the temperature compensating PN junction for substantially preventing a transistor action from taking place between the respective PN junctions, wherein the semiconductor region is formed of at least one of a polycrystalline semiconductor layer and a single crystal semiconductor layer having an impurity concentration of higher than about 5.times.10.sup.18 atoms/cm.sup.3.
REFERENCES:
patent: 3612959 (1971-10-01), Simon
patent: 3780322 (1973-12-01), Walters
patent: 3953254 (1976-04-01), Valdman
patent: 3990099 (1976-11-01), Duigon et al.
patent: 4019195 (1977-04-01), Merino
patent: 4075649 (1978-02-01), Verdermer
L. Morgenstern, "Temp.-Compensated Zener Diodes," Semiconductor Products, Apr. 1962, pp. 25-29.
Ogawa Takuzo
Suzuki Takaya
Ura Mitsuru
Clawson Jr. Joseph E.
Hitachi , Ltd.
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