Temperature compensated vertical pin probing device

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324754, 324755, G01R 3102

Patent

active

061631620

ABSTRACT:
An improved vertical pin probing device is constructed with a housing spaced upper and lower dies of Invar.RTM., which substantially matches the coefficient of thermal expansion of the silicon wafer being probed. Spaced slots in the top and bottom dies of the housing contain inserts of Vespel.RTM.. The inserts are provided with matching patterns of holes supporting probe pins and insulating the probe pins from the housing.

REFERENCES:
patent: 4027935 (1977-06-01), Byrnes et al.
patent: 5670889 (1997-09-01), Okubo et al.
patent: 5952843 (1999-09-01), Vinh
patent: 6005401 (1999-12-01), Nakata et al.
IBM, C4 Product Design Manual vol. 1: Chip and Wafer Design Chapter 9, Wafer Probing Manual distributed to Sematech, MCNC at seminars in 1993 and 1994.

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