Temperature compensated semiconductor integrated circuit

Details Temperature compensated semiconductor integrated circuit Temperature compensated semiconductor integrated circuit

1983-12-23

1986-05-13

Wong, Peter S.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

307310, 323907, G05F 322

Patent

active

045889406

ABSTRACT:
The present invention relates to a circuit capable of providing a negative temperature coefficient greater than that provided by discrete silicon integrated circuit components. A constant current source and a resistor divider network are added to a bipolar junction transistor, where the resistors and the constant current source function to increase the negative temperature coefficient of a bipolar junction transistor. The negative temperature compensation circuit formed in accordance with the present invention provides a sufficient negative temperature coefficient to offset the large positive temperature coefficient associated with high voltage avalanche breakdown diodes without requiring a high voltage integrated circuit.

REFERENCES:
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patent: 4349778 (1982-09-01), Davis
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IBM Technical Disclosure Bulletin, vol. 14, No. 4 Sep. 1971.

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