Temperature-compensated ring oscillator circuit formed on a semi

Details Temperature-compensated ring oscillator circuit formed on a semi Temperature-compensated ring oscillator circuit formed on a semi

1992-01-24

1993-01-19

Grimm, Siegfried H.

Oscillators

Ring oscillators

331176, 331186, H03L 102

Patent

active

051809958

ABSTRACT:
An improved ring oscillator is disclosed which can be formed in a semiconductor substrate. The ring oscillator includes inverters cascaded in a ring-like manner, and a diffused resistor R1 having a positive temperature coefficient and a polysilicon resistor R2 having a negative temperature coefficient for determining bias currents supplied to the inverters. The oscillation frequency tends to decrease with a rise of ambient temperature based on a temperature characteristic of diffused resistor R1 and a temperature characteristic of the oscillator circuit itself; however, the change of oscillation frequency is compensated by a temperature characteristic of polysilicon resistor R2. Therefore, a reference clock signal generating circuit having an oscillation frequency which is not affected by change of the ambient temperature can be formed in the semiconductor substrate.

REFERENCES:
patent: 4015219 (1977-03-01), Kawagoe et al.
patent: 4853654 (1989-08-01), Sakurai
patent: 5072197 (1991-12-01), Anderson
Design of a 4-MHz Analog Integrated CMOS Transconductance-C Bandpass Filter IEEE Journal of Solid-State Circuits, vol. 23, No. 4, Aug. 1988, pp. 987-996.
1991 Symposium on VLSI Circuits Digest of Technical Papers JSAP Cat. No. AP911211 IEEE Cat. No. 91 CH 3018-9, May-Jun. 1991/OISO, pp. 73-74.
Gray et al., Analysis and Design of Analog Integrated Circuits Chapter 12: MOS amplifier Design, Section 3: Temperature and Supply-Independent Biasing pp. 736-737.

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