Temperature compensated reference for overerase correction circu

Static information storage and retrieval – Floating gate – Particular biasing

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3651852, 36518533, G11C 1134

Patent

active

056509669

ABSTRACT:
A reference circuit for overerase correction in a flash memory includes a reference flash memory cell biased in a substantially similar manner to that of an overerased flash memory cell. The leakage current for the reference flash memory cell is preset to a tolerable level of leakage current for a maximum operating temperature of the flash memory and the reference flash memory cell tracks the temperature characteristics of the overerased flash memory cell, to avoid costly overcorrection at high temperatures.

REFERENCES:
patent: 5157626 (1992-10-01), Watanabe

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