Temperature compensated on-chip bias circuit for linear RF...

Details Temperature compensated on-chip bias circuit for linear RF... Temperature compensated on-chip bias circuit for linear RF...

2006-06-06

2006-06-06

Choe, Henry (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including temperature compensation means

C330S285000

Reexamination Certificate

active

07057462

ABSTRACT:
An RF amplifier is disclosed having a first and second current mirror module. The first and second current mirror modules each provide current to affect the quiescent bias current of the RF amplifier.

REFERENCES:
patent: 4990864 (1991-02-01), Kwan
patent: 6492874 (2002-12-01), Shih
patent: 6922107 (2005-07-01), Green
Jarvinen, Esko, et al, “Bias Circuits for GaAs HBT Power Amplifiers,” IREE MTT-S 2001 International Microwave Symposium Digest, IEEE, 5 pp.

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