Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-08-19
2011-11-08
Landau, Matthew (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE21664, C257SE21009
Reexamination Certificate
active
08053251
ABSTRACT:
A temperature-compensated capacitor device has ferroelectric properties and includes a ferroelectric capacitor using a ferroelectric material such as a metal oxide ferroelectric material, a negative-temperature-variable capacitor using a negative-temperature-coefficient-of-capacitance material such as a metal oxide paraelectric material, and an electrical series connection between the negative-temperature-variable capacitor and the ferroelectric capacitor. The temperature-compensated capacitor device may be formed as an integrated layered structure, or as separate capacitors with a discrete electrical connection therebetween.
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Dougherty T. Kirk
Drab John J.
Baker & Botts L.L.P.
Crawford Latanya N
Landau Matthew
Raytheon Company
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