Electricity: power supply or regulation systems – Remote sensing
Patent
1977-08-02
1980-05-27
Pellinen, A. D.
Electricity: power supply or regulation systems
Remote sensing
G05F 308
Patent
active
042052637
ABSTRACT:
There is provided a MOS field effect transistor circuit comprising a negative power terminal, an N-channel type field effect transistor with the substrate coupled to the negative power terminal, a diode coupled in the forward direction between the negative power terminal and the gate of the N-channel type field effect transistor, and a high-resistance resistor coupled between the junction of the diode and the gate of the N-channel type field effect transistor and an earth terminal. The variation in the threshold voltage of the N-channel type field effect transistor owing to temperature change is compensated by variation in the forward voltage of diode with the temperature change to keep constant the voltage applied to the gate of the field effect transistor, thereby securing the constant current property of the field effect transistor for temperature change.
REFERENCES:
patent: 3710271 (1973-01-01), Putman
patent: 3806742 (1974-04-01), Powell
patent: 3934159 (1976-01-01), Nomiya et al.
patent: 4009401 (1977-02-01), Sasaki
patent: 4015146 (1977-03-01), Aihara et al.
patent: 4020367 (1977-04-01), Yamashiro et al.
patent: 4119904 (1978-10-01), Haglund
Kawagai Kenji
Yoshida Shigeki
Pellinen A. D.
Tokyo Shibaura Electric Co. Ltd.
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