Temperature compensated complementary metal-insulator-semiconduc

Details Temperature compensated complementary metal-insulator-semiconduc Temperature compensated complementary metal-insulator-semiconduc

1985-10-15

1987-12-22

Grimm, Siegfried H.

Oscillators

Frequency stabilization

Temperature or current responsive means in circuit

307491, 307501, 307297, 307310, 323315, 331111, 331186, G05F 324, G05F 326, H02J 104, H03K 3354

Patent

active

047149019

ABSTRACT:
A temperature compensated complementary metal-insulator-semiconductor oscillator receives a temperature independent reference voltage from an external source. The temperature independent reference voltage is attenuated and summed with a threshold voltage in order to bias a gate electrode of MOSFET. A bipolar p-n junction diode is connected to the MOSFET at a source electrode in order to bias the MOSFET with a temperature dependent forward voltage drop to compensate for temperature variations therein. The MOSFET controls a temperature independent current. A current mirror assembly receives the current and controls a Schmitt trigger oscillator. The Schmitt trigger oscillator generates a signal having a temperature independent constant period.

REFERENCES:
patent: 4015219 (1977-03-01), Kawagoe et al.

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