Temperature compensated chemical mechanical polishing to achieve

Details Temperature compensated chemical mechanical polishing to achieve Temperature compensated chemical mechanical polishing to achieve

1997-05-30

1999-02-23

Eley, Timothy V.

Abrading

Precision device or process - or with condition responsive...

Controlling temperature

451 36, 451 41, 451 53, 451287, 451398, B24B 4900, B24B 100

Patent

active

058737693

ABSTRACT:
A method and apparatus are described for Chemical Mechanical Polishing of wafers which achieves a constant removal rate of material from the wafer over the entire surface of the wafer. The wafer is held in a wafer carrier rotating at a wafer carrier angular velocity and is polished using a platen rotating at a platen angular velocity. The pressure exerted on the wafer by the wafer carrier is the largest at the wafer edge and smallest at the center of the wafer. The wafer carrier is divided into a number of wafer carrier circular segments so that the temperature of each wafer carrier circular segment can be controlled. The platen is divided into a number of platen circular segments so that the temperature of each platen circular segment can be controlled. The temperatures of the wafer carrier circular segments and the platen circular segments are then adjusted to provide a removal rate of material from the wafer which is uniform across the surface of the wafer.

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