Temperature compensated bipolar circuits

Amplifiers – With semiconductor amplifying device – Including differential amplifier

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330289, H03F 345

Patent

active

048536466

ABSTRACT:
A temperature compensated ECL gate (20) with each gate circuit resistance formed by a pair of opposite polarity temperature coefficient resistors. A first gate transistor element (Q1) and a second gate transistor element (Q2) coupled at a common emitter coupling (12) provide alternative collector current paths from high potential (V.sub.cc) through a first gate transistor collector path with collector resistance (R11,R12) and a gate transistor collector path with collector resistance (R21,R22). A current source transistor element (Q3) is coupled between the common emitter coupling (12) of the gate transistor elements and low potential (V.sub.EE) through current source resistance (R31,R32). The resistances of the ECL gate each include a positive temperature coefficient silicon first resistor (R11,R21,R31) and a negative temperature coefficient low capacitance polysilicon second resistor coupled (R12,R22,R32) in series. The sum of the resistances of the first and second resistors is selected to providing the respective circuit resistance of the ECL gate and the ratio of the resistances of the first and second resistors is selected according to the temperture characteristics of the current source voltage generator and the temperature characteristics of the first and second resistors for substantial temperature compensation of the gate current and signal voltage swing over a specified temperature range. The temperature compensating pair of opposite polarity temperature coefficient resistors is also applicable for temperature compensation at active nodes of TTL and STL circuits.

REFERENCES:
patent: 4207538 (1980-06-01), Goel
patent: 4757273 (1988-07-01), Bray

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