Temperature compensated bias circuit for semiconductor lasers

Details Temperature compensated bias circuit for semiconductor lasers Temperature compensated bias circuit for semiconductor lasers

1978-10-30

1981-01-06

Sikes, William L.

Oscillators

Molecular or particle resonant type

H01S 313

Patent

active

042439523

ABSTRACT:
Within a power supply circuit for a semiconductor laser, output current is maintained constant at each temperature level over an operating range and the magnitude of that constant current is varied directly with temperature to maintain the light output of the laser substantially constant over the operating temperature range. In the preferred embodiment, the negative temperature coefficient characteristic of the base-emitter junction voltage for bipolar transistors is utilized to compensate for the negative temperature coefficient characteristic of the light output from the semiconductor laser.

REFERENCES:
patent: 3751726 (1973-08-01), Einthoven et al.
patent: 3973852 (1976-08-01), Moore et al.
patent: 3987318 (1976-10-01), Meijer
patent: 4092614 (1978-05-01), Sakuma
patent: 4142115 (1979-02-01), Nakada et al.
RCA Technical Note No. 1005, "Stabilization of CW Injection Lasers" by Wittke, Patterson and Landay.

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