Temperature calibration wafer for rapid thermal processing using

Details Temperature calibration wafer for rapid thermal processing using Temperature calibration wafer for rapid thermal processing using

1998-01-27

2000-03-14

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257469, H01L 3100

Patent

active

060376457

ABSTRACT:
A thin-film thermocouple is provided which can be used at temperature of up to 900.degree. C. The thin-film thermocouple includes: a silicon substrate; an SiO.sub.2 diffusion barrier layer formed on the substrate; a titanium oxide adhesion layer formed on the diffusion barrier layer; a palladium thin film formed on the diffusion barrier layer; and a platinum thin film formed on the diffusion barrier layer and overlapping a portion of the palladium thin film to form a thermocouple junction.

REFERENCES:
patent: 4456919 (1984-06-01), Tomita
patent: 4571608 (1986-02-01), Johnson
patent: 5033866 (1991-07-01), Kehl et al.
patent: 5374123 (1994-12-01), Bu
patent: 5411600 (1995-05-01), Rimai et al.
patent: 5436494 (1995-07-01), Moslehi
patent: 5474619 (1995-12-01), Krieder
"High Temperature Silicide Thin-Film" by Kenneth G. Krieder, pp. 285-290, Mat. Res. Soc. Symp. Proc. vol. 322, 1994 Materials Research Society.
SensArray Corporation, Using SensArray Temperature Instrumented Wafers, Series 1501, Type K Thermocouples Temperature Range 0.degree. C. to 1100.degree. C., 1501-K User Guide, Feb. 5, 1994, pp. 1-2.

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