Temperature and process stable MOS input buffer

Details Temperature and process stable MOS input buffer Temperature and process stable MOS input buffer

1984-08-06

1986-04-22

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307496, 307297, 307310, H03K 1730

Patent

active

045844925

ABSTRACT:
A MOS integrated circuit buffer which operates over a wide temperature range particularly suited for receiving a TTL signal over the range of -55 degrees C. to 155 degrees C. even with expected process variations. A compensated reference potential is developed in a feedback circuit. This reference potential is used to provide compensation to a buffer section which has substantially identical characteristics to the feedback circuit. The trigger point of the buffer section is thus maintained at the reference potential.

REFERENCES:
patent: 4110641 (1978-08-01), Payne
patent: 4199693 (1980-04-01), Bennett
patent: 4258272 (1981-03-01), Huang
patent: 4410813 (1983-08-01), Barker et al.
patent: 4430582 (1984-02-01), Bose et al.
patent: 4437024 (1984-03-01), Wacyk

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