Temperature and/or process independent current generation...

Details Temperature and/or process independent current generation... Temperature and/or process independent current generation...

2005-03-22

2005-03-22

Zweizig, Jeffrey (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

External effect

Temperature

C327S543000

Reexamination Certificate

active

06870418

ABSTRACT:
Embodiments of the present invention relate to current and/or voltage generation. The current and/or voltage generation may be process independent. Accordingly, variances in a manufacturing process will not substantially affect the ultimate current or voltage output from the circuit.

REFERENCES:
patent: 5034626 (1991-07-01), Pirez et al.
patent: 5349286 (1994-09-01), Marshall et al.
patent: 5818294 (1998-10-01), Ashmore, Jr.
patent: 5880625 (1999-03-01), Park et al.
patent: 6107868 (2000-08-01), Diniz et al.
Stephen Tang. et al.; Temperature and Process Invariant MOS-based Reference Current Generation Circuits or Sub-1V Operation; ISLPED'03, Aug. 25-27, 2003, Seoul, Korea.
Siva Narendra, et al.; Sub-1 V Process-Compensated MOS Current Generation Without Voltage Reference; 2001 Symposium on VLSI Circuits Digest of Technical Papers pp. 143-144.

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