TEM mode quantum wire or well structure

Details TEM mode quantum wire or well structure TEM mode quantum wire or well structure

1996-04-16

1997-08-26

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 26, 372 43, 372 50, 372 19, 257 14, H01S 319, H01L 2906

Patent

active

056617402

ABSTRACT:
A semiconductor lasing device is formed by disposing a quantum well or quum wire array between positive and negative ohmic contacts such that different potentials are applied along the array to establish a transverse electromagnetic (TEM) mode of the optic signal (i.e. where the field components lie in a plane perpendicular to the direction of propagation). Thus, the light confinement l will be on the order of the electron confinement a. By applying different potentials via the positive and negative ohmic contacts to multiply connected waveguides, the established TEM mode does not have a cut-off frequency, and therefore, the gain of device can be greatly enhanced while still providing increased anisotropy and a low threshold current.

REFERENCES:
patent: 4700353 (1987-10-01), Van Gieson et al.
patent: 4752934 (1988-06-01), Fukuzawa et al.
patent: 5345462 (1994-09-01), Choquette
patent: 5586131 (1996-12-01), Ono et al.

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