Tellurium precursors for GST films in an ALD or CVD process

Details Tellurium precursors for GST films in an ALD or CVD process Tellurium precursors for GST films in an ALD or CVD process

2011-06-14

2011-06-14

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S099000, C438S102000, C257S040000, C257SE21068

Reexamination Certificate

active

07960205

ABSTRACT:
The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.

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