Tellurium layer allows vapor deposition of crystalline selenium

Details Tellurium layer allows vapor deposition of crystalline selenium Tellurium layer allows vapor deposition of crystalline selenium

1979-02-16

1981-11-03

Welsh, John D.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Process of making radiation-sensitive product

430134, 430130, 430 60, 430 61, 427 76, G03G 505

Patent

active

042986710

ABSTRACT:
In a process for producing an electrophotographic recording material composed of a double layer of amorphous and crystallized selenium on an electrically conductive carrier, a layer of tellurium having a thickness of 10 to 500 nm is applied onto the surface of the carrier, and selenium is then vapor-deposited onto the tellurium layer to a thickness of 20 to 100.mu. to form the double layer.

REFERENCES:
patent: 3655377 (1972-04-01), Sechak
patent: 4021375 (1977-05-01), Moore
patent: 4094675 (1978-06-01), Beschoner et al.

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