Technology for increasing bandwidth of semiconductor optical...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C438S047000, C372S045011

Reexamination Certificate

active

07045812

ABSTRACT:
The present invention provides a technology for increasing the spectral width of semiconductor optical amplifiers, employing different separate confinement heterostructures (SCH's) so as to form non-identical multiple quantum wells such that the semiconductor photo-electronic devices have better temperature characteristics and more reliable modulation characteristics. If such a technology is used in the fabrication of semiconductor laser with a tunable wavelength, it is possible to achieve a large range of modulated wavelength, which is very useful in optical communication.

REFERENCES:
patent: 6014250 (2000-01-01), Granestrand
patent: 6288410 (2001-09-01), Miyazawa
patent: 6400742 (2002-06-01), Hatakoshi et al.
Ng, “Complete Guide to Semiconductor Devices,” 1995, McGraw-Hill, pp. 390-391.
Lin et al., “Electron-Determined Nonuniform Carrier Distribution among InGaAsP Multiple Quantum Wells”, Jpn. J. Appl. Phys., vol. 42 (2003) pp. 5557-5558.
Lin et al., “Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers-superluminescent diodes”, Optical Society of America, vol. 26, No., 14, Jul. 15, 2001, pp. 1099-1100.

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