Techniques of recovering data from memory cells affected by...

Details Techniques of recovering data from memory cells affected by... Techniques of recovering data from memory cells affected by...

2005-01-25

2005-01-25

Nguyen, Tan T. (Department: 2818)

Static information storage and retrieval

Floating gate

Particular connection

C365S185030

Reexamination Certificate

active

06847553

ABSTRACT:
Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.

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European Search Report; Application No.: EP 03250231; European Patent Office; The Hague; Apr. 26, 2004, 2 pages.

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