Techniques for use of nanotechnology in photovoltaics

Details Techniques for use of nanotechnology in photovoltaics Techniques for use of nanotechnology in photovoltaics

2011-07-12

2011-07-12

Nguyen, Khiem D (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S040000, C257SE51026, C257SE27051, C257SE29024, C438S082000, C438S099000, C977S813000, C977S827000, C977S936000

Reexamination Certificate

active

07977690

ABSTRACT:
Techniques for combining nanotechnology with photovoltaics are provided. In one aspect, a method of forming a photovoltaic device is provided comprising the following steps. A plurality of nanowires are formed on a substrate, wherein the plurality of nanowires attached to the substrate comprises a nanowire forest. In the presence of a first doping agent and a first volatile precursor, a first doped semiconductor layer is conformally deposited over the nanowire forest. In the presence of a second doping agent and a second volatile precursor, a second doped semiconductor layer is conformally deposited over the first doped layer. The first doping agent comprises one of an n-type doping agent and a p-type doping agent and the second doping agent comprises a different one of the n-type doping agent and the p-type doping agent from the first doping agent. A transparent electrode layer is deposited over the second doped semiconductor layer.

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