Techniques for removal of photolithographic films

Details Techniques for removal of photolithographic films Techniques for removal of photolithographic films

2005-10-04

2009-10-06

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21492

Reexamination Certificate

active

07598179

ABSTRACT:
Techniques for removal of photolithographic films used in the manufacture of semiconductor devices are provided. A substrate support member of a first processing chamber includes at least three retractable pins capable of elevating a wafer from a surface of the substrate support member. In addition, the first processing chamber is configured to automatically maintain the substrate support member at a first temperature. The wafer is elevated from the surface of the substrate support member using the at least three retractable pins. Thermal heating of the substrate from the substrate support member is reduced. A photoresist layer of the substrate is etched away while the substrate is in an elevated position. An anti-reflective layer of the substrate can be etched to remove substantially all of the anti-reflective layer. In a specific embodiment, the anti-reflective layer includes a DUO™ Bottom Anti-Reflective Coating by Honeywell International Inc.

REFERENCES:
patent: 6268457 (2001-07-01), Kennedy et al.
patent: 6486061 (2002-11-01), Xia et al.
patent: 6686570 (2004-02-01), Furukawa et al.
patent: 6905800 (2005-06-01), Yuen et al.
patent: 2005/0266691 (2005-12-01), Gu et al.
Liou et al., “Effect of Curing Temperature on the Mechanical Properties of Hydrogen Silsesquioxane Thin Films”, Jun. 1998, Thin Solid Films, vol. 335, pp. 186-191.

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