Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2006-07-25
2006-07-25
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE27006, C257S295000
Reexamination Certificate
active
07081658
ABSTRACT:
The present invention provides techniques for data storage. In one aspect of the invention, a semiconductor device is provided. The semiconductor device comprises at least one free layer and at least one fixed layer, with at least one barrier layer therebetween. At least one pinned magnetic layer is separated from the at least one free layer by at least one non-magnetic layer, the at least one pinned magnetic layer and non-magnetic layer being configured to cancel out at least a portion of a Neel coupling between the at least one free layer and the at least one fixed layer.
REFERENCES:
patent: 6885073 (2005-04-01), Drewes
patent: 2003/0168673 (2003-09-01), Yuasa et al.
Klostermann Ulrich
Worledge Daniel Christopher
Ho Tu-Tu
Infineon Technologies North America Corp.
Ryan & Mason & Lewis, LLP
LandOfFree
Techniques for reducing Neel coupling in toggle switching... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Techniques for reducing Neel coupling in toggle switching..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Techniques for reducing Neel coupling in toggle switching... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3583276