Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2009-02-03
2011-11-29
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S532000, C257SE21705, C257SE27046, C257SE27048
Reexamination Certificate
active
08067816
ABSTRACT:
A semiconductor die includes a semiconductive substrate layer with first and second sides, a metal layer adjacent the second side of the semiconductive substrate layer, one or more active devices in an active layer on the first side of the semiconductive substrate layer; and a passive device in the metal layer in electrical communication with the active layer. The passive device can electrically couple to the active layer with through silicon vias (TSVs).
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patent: 2008/0001269 (2008-01-01), Hsu
patent: 2008/0315356 (2008-12-01), Reisner
patent: 102007009383 (2008-08-01), None
International Search Report-PCT/ US2010/023070, International Search Authority-European Patent Office May 28, 2010.
Written Opinion-PCT/ US2010/023070, International Search Authority-European Patent Office May 28, 2010 .
Gu Shiqun
Henderson Brian Matthew
Kim Jong-hae
Nowak Matthew
Toms Thomas R.
Blum David S
Gallardo Michelle
QUALCOMM Incorporated
Talpalatsky Sam
Velasco Jonathan T.
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