Techniques for impressing a voltage with an electron beam

Electricity: measuring and testing – Determining nonelectric properties by measuring electric... – Erosion

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324158D, 29574, G01N 2700

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active

042963729

ABSTRACT:
An insulated conductive region, such as a doped semiconductor region in a semiconductor substrate and/or a metal conductor carried insulated on a substrate is subjected to non-destructive testing to determine the electrical integrity of the region. The outer portion of the insulating material may be, for example, a passivating layer and is provided with a metal film which extends over a conductive region to be tested. An electrical potential is applied to the metal film and the structure is subjected to electron beam radiation of sufficient energy level to provide a diffusion cloud which extends from the metal film to the region undergoing tests to form an electrical connection therewith. A voltage measurement taken at the region, with respect to a reference provides an indication of the electrical integrity of the tested region.

REFERENCES:
patent: 3373353 (1968-03-01), Harris
Walker et al., Electron Beam Testing Apparatus for Integrated Circuits, IBM Tech. Disc. Bull., vol. 10, No. 2, Jul. 1967, pp. 175-176.
Crosthwait, "Scanning Electron Microscopy", Part IV-11TR1, Chicago/USA, SEM, Apr. 1976, pp. 515-520.

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