Techniques for forming passive devices during semiconductor...

Details Techniques for forming passive devices during semiconductor... Techniques for forming passive devices during semiconductor...

2006-08-18

2008-11-25

Smith, Matthew S. (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S210000, C438S238000, C438S384000, C257SE21006, C257SE21496

Reexamination Certificate

active

07456076

ABSTRACT:
Fabrication of electronic devices in the “metal layers” of semiconductor devices. Each metal layer includes a dielectric layer that supports a conductive layer, which includes electrically conductive pathways and electronic devices. The metal layers are stacked on top of each other such that the dielectric layers separate the adjacent conductive layers. The electronic devices may be passive devices such as resistors. The resistors are formed by depositing metal onto the dielectric layer and then implanting the metal with oxygen. The conductive layer may be formed of materials such as copper and aluminum.

REFERENCES:
patent: 4390586 (1983-06-01), Lemelson
patent: 5436177 (1995-07-01), Zaccherini
patent: 6261946 (2001-07-01), Iacoponi et al.
patent: 6730984 (2004-05-01), Ballantine et al.
patent: 6815319 (2004-11-01), Leidy

Affiliated with

Also associated with

Rating

Techniques for forming passive devices during semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Techniques for forming passive devices during semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Techniques for forming passive devices during semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4020854