Techniques for coupling in semiconductor devices

Details Techniques for coupling in semiconductor devices Techniques for coupling in semiconductor devices

2009-08-11

2011-10-11

Nguyen, Thinh (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S002000, C438S017000, C257S295000, C257SE21211, C365S171000, C365S173000

Reexamination Certificate

active

08034637

ABSTRACT:
Techniques for exchange coupling of magnetic layers in semiconductor devices are provided. In one aspect, a semiconductor device is provided. The device comprises at least two magnetic layers, and a spacer layer formed between the magnetic layers, the spacer layer being configured to provide ferromagnetic exchange coupling between the layers, the magnetic layers experiencing anti-ferromagnetic dipole coupling, such that a net coupling of the magnetic layers is anti-ferromagnetic in a zero applied magnetic field. The semiconductor device may comprise magnetic random access memory (MRAM). In another aspect, a method for coupling magnetic layers in a semiconductor device comprising at least two magnetic layers and a spacer layer therebetween, the method comprises the following step. Ferromagnetic exchange coupling is provided of the magnetic layers, the magnetic layers experiencing anti-ferromagnetic dipole coupling, such that a net coupling of the magnetic layers is anti-ferromagnetic in a zero applied magnetic field.

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