Technique of silicon epitaxial refill

Details Technique of silicon epitaxial refill Technique of silicon epitaxial refill

1982-07-19

1983-08-23

Powell, William A.

Coating processes

Electrical product produced

Condenser or capacitor

29576W, 29580, 148175, 156648, 156653, 156657, 156612, 156613, 357 49, 427 94, 427 95, B05D 512, H01L 736, B44C 122, C03C 1500

Patent

active

044004117

ABSTRACT:
A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.

REFERENCES:
patent: 3566220 (1971-02-01), Post
patent: 3574008 (1971-04-01), Rice
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3780426 (1973-12-01), Ono et al.
patent: 4101350 (1978-07-01), Possley et al.
patent: 4141765 (1979-02-01), Druminski et al.
patent: 4151034 (1979-04-01), Yamamoto et al.
patent: 4155802 (1979-05-01), Yonezawa et al.
Sirtl and Seiter, "Selective Epitaxy of Silicon under Quasi-Equilibrium Conditions", 1969, pp. 189-197, Semiconductor Silicon, Edited by R. R. Haberecht and E. L. Kern, Electrochem. Society Publications.
Iwamatsu, Meguro and Shimizu, "A New Isolation Structure for High Density LSI", Washington, D.C. 1973, p. 244, IEDM Technical Diggest.
Watanabe, Arita, Yokoyama and Igarashi, "Formation and Properties of Porous Silicon and its Application", 1975, p. 13.

Affiliated with

Also associated with

Rating

Technique of silicon epitaxial refill does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Technique of silicon epitaxial refill, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique of silicon epitaxial refill will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1947311