Metal treatment – Compositions – Heat treating
Patent
1978-12-28
1980-07-29
Rutledge, L. DeWayne
Metal treatment
Compositions
Heat treating
29571, 29578, 148174, 357 23, 357 52, 357 54, 427 93, 427399, H01L 2131, H01L 21469
Patent
active
042149193
ABSTRACT:
A particular embodiment involves the oxidation of hot monolithic silicon circuit substrates to grow thin silicon dioxide films (<500 A.degree. thick) free of "nitrogenous micro-defects", using pre-oxidation and post-oxidation sequences where the Nitrogen content (as the atmosphere) is reduced, if not eliminated, to avoid problems created by such micro-defects, especially degradation of breakdown voltage across the oxide. N.sub.2 is preferably replaced by Argon which generates no such micro-defects.
REFERENCES:
patent: Re28402 (1975-04-01), Aboaf et al.
patent: 3200019 (1965-08-01), Scott et al.
patent: 3336661 (1967-08-01), Polinsky
patent: 3518115 (1970-06-01), Pammer et al.
patent: 3639186 (1972-02-01), Forster et al.
patent: 3666546 (1972-05-01), Reuter et al.
patent: 3837905 (1974-09-01), Hile et al.
patent: 3903325 (1975-09-01), Horiuchi
patent: 4100310 (1978-07-01), Ura et al.
Duffy et al., "Interface Properties of Si-(SiO.sub.2)-Al.sub.2 O.sub.3 Structures", J. Electrochem. Soc., vol. 117, No. 3, Mar. 1970, pp. 372-377.
Pliskin et al., "Structural Evaluation of Silicon Oxide Films", Ibid., vol. 112, No. 10, Oct., 1965, pp. 1013-1019.
Burroughs Corporation
Cass Nathan
McCormack John J.
Peterson Kevin R.
Rutledge L. Dewayne
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