Technique for thin insulator growth

Details Technique for thin insulator growth Technique for thin insulator growth

1984-05-29

1985-04-09

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 93, 427 94, B05D 306

Patent

active

045101728

ABSTRACT:
This invention relates to a process for forming thin insulator films on conductive or semiconductive substrates in a gas plasma and more particularly relates to a process for the growth of such thin insulating films wherein the rate of insulator growth on one surface of a substrate is controlled by predepositing specific amounts of insulating films such as silicon dioxide or silicon nitride on the other surface of the substrate. Substrates with predeposited insulators form insulating films much more slowly in a gas plasma than bare substrates and, after an initial fast growth phase, the insulator thickness reaches a steady growth phase. Because of the resulting slower rate of insulator formation, control of the desired insulator thickness is easy and it is even easier if the desired insulator thickness is close to the steady growth phase.

REFERENCES:
patent: 3647535 (1972-03-01), Naber
patent: 4178877 (1979-12-01), Kudo
patent: 4232057 (1980-11-01), Ray
patent: 4323589 (1982-04-01), Ray et al.

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