Technique for removing resist material after high dose...

Details Technique for removing resist material after high dose... Technique for removing resist material after high dose...

2007-07-25

2010-10-19

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S531000, C257S021000

Reexamination Certificate

active

07816273

ABSTRACT:
Resist masks exposed to high-dose implantation processes may be efficiently removed on the basis of a combination of a plasma-based etch process and a wet chemical etch recipe, wherein both etch steps may include a highly selective etch chemistry in order to minimize substrate material loss and thus dopant loss in sophisticated semiconductor devices. The first plasma-based etch step may provide under-etched areas of the resist mask, which may then be efficiently removed on the basis of the wet chemical etch process.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2006 062 035.6-43 dated Jul. 13, 2007.

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